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Simplified Z-propagating DC bias stable TE-TM mode convertor fabricated in Y-cut lithium niobate

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3 Author(s)
Sanford, N.A. ; Polaroid Corp., Cambridge, MA, USA ; Connors, J.M. ; Dyes, W.A.

A TE-TM mode converter, useful at either 0.632 or 0.840 μm, has been fabricated on y-cut LiNbO3 by Ti indiffusion with the channel waveguide placed parallel to the z-axis. For TE polarized input, the maximum TM modulation depth is 97 percent at 0.632 μm with a 5-V (pp) drive and 99 percent at 0.840 μm with a 12-V (pp) drive. A similar device operating at 1.3 μm displays 98-percent TE-TM switching at 68 V. Operation involves only coplanar electrodes placed alongside the channel acting on the r61 electrooptic coefficient. A separately deposited buffer layer is unnecessary. Testing indicates a substantially greater tolerance to electrode misalignment than afforded by similar structures formed in x-cut substrates. Data illustrating immunity to photorefractive drift in the presence of a DC bias voltage is presented for 0.840-μm wavelength operation

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Lightwave Technology, Journal of  (Volume:6 ,  Issue: 6 )