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A 50 to 94-GHz CMOS SPDT Switch Using Traveling-Wave Concept

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4 Author(s)
Shih-Fong Chao ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Huei Wang ; Chia-Yi Su ; John G. J. Chern

A fully integrated single-pole-double-throw transmit/receive switch has been designed and fabricated in standard bulk 90-nm complementary metal-oxide semiconductor (CMOS) technology. Traveling wave concept was used to minimize the insertion loss at higher frequency and widen the operating bandwidth. The switch exhibits a measured insertion loss of 2.7 -dB, an input 1-dB compression point (input P1 dB) of 15 dBm, and a 29-dB isolation at the center frequency of 77 GHz. The total chip size is only 0.57 times 0.42 mm 2 including all testing pads. To our knowledge, this is the first CMOS switch demonstrated beyond 50 GHz, and the performances rival those monolithic microwave integrated circuit switches using standard GaAs PHEMTs

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:17 ,  Issue: 2 )