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A 4–41 GHz Singly Balanced Distributed Mixer Using GaAs pHEMT Technology

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4 Author(s)
Fong-Cheng Chang ; Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei ; Pei-Si Wu ; Ming-Fong Lei ; Huei Wang

A broadband singly balanced distributed mixer is developed using a 0.15-mum GaAs pHEMT foundry process. It is the first time that the charge-injection approach is applied to a distributed mixer. With the advantage of charge-injection, the mixer achieves a high conversion gain with low dc consumption. The fabricated distributed mixer with an integrated broadband transformer has a compact chip size of 2mmtimes1mm. Measurement results show that the mixer achieves a conversion gain of better than 3.5dB over a broadband frequency from 4-41GHz, with a relatively low dc power consumption of 100mW

Published in:

IEEE Microwave and Wireless Components Letters  (Volume:17 ,  Issue: 2 )