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Radiation Hardness of Hardened-By-Design SRAMs in Commercial Foundry Technologies

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5 Author(s)
Nowlin, R.N. ; Mission Res. Microelectron. Div., Alliant Techsystems (ATK), Albuquerque, NM ; Begay, C.S. ; Parker, R.R. ; Garrett, M.P.
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Hardened-by-design (HBD) SRAMs are shown to be latchup immune in four commercial foundry technologies. The single-event error rates are shown to be less than 10-9 errors/bit/day for these HBD SRAMs. We also report total-dose and prompt-dose hardness results. Hardness assurance of HBD SRAMs in commercial processes is considered

Published in:

Radiation Effects Data Workshop, 2006 IEEE

Date of Conference:

July 2006