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Proton radiation effects in high power LEDs and IREDs for Optical Wireless Links for intra-Satellite communications (OWLS)

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8 Author(s)
Jimenez, J.J. ; Laboratorio de Optoelectron., Inst. Nacional de Tecnica Aeroespacial, Torrejon de Ardoz ; Alvarez, M.T. ; Tamayo, R. ; Oter, J.M.
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This paper presents data on proton displacement damage on light-emitting diodes (LEDs) and infrared emitting diodes (IREDs) of different technologies between 650 and 950 nm. 160 devices of a variety of 28 different COTS emitters were irradiated. Most irradiations were carried out with 52 MeV protons. Two components were also studied with 30 and 60 MeV protons. Light output and I-V characteristic curves were measured for emitters during the test. Injection enhanced annealing is also reported. As a result of this screening, 8 types of emitters have been identified as being tolerant to proton irradiation up to fluences of 2-1012 p/cm2. These issues are presented from the perspective of the work currently ongoing in the OWLS activities performed at INTA (Institute Nacional de Tecnica Aeroespacial of Spain). In this context, data about the first worldwide OWLS in-flight experience in the Spanish NANOSAT 01 are presented

Published in:

Radiation Effects Data Workshop, 2006 IEEE

Date of Conference:

July 2006

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