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A 90-nm Wideband Merged CMOS LNA and Mixer Exploiting Noise Cancellation

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3 Author(s)
Amer, A. ; Electron. & Commun. Eng. Dept., Ain Shams Univ., Cairo ; Hegazi, E. ; Ragaie, H.F.

This paper describes the design and implementation of a wideband merged LNA and mixer chip covering the frequency range from 0.1 to 3.85 GHz using 90-nm CMOS technology. Its high level of integration as well as its low power consumption makes it suitable for the rapidly growing software defined radio RF receivers. The chip performance achieves S11 below -10 dB along the entire band and a minimum single side band noise figure of 8.4 dB at IF frequency of 70 MHz. Power conversion gain is measured to be 12.1 dB while the input referred 1 dB compression point is measured to be -12.8 dBm. The chip core consumes only 9.8 mW from a 1.2 V supply with a die area, including the pads, of 0.88 mm2

Published in:

Solid-State Circuits, IEEE Journal of  (Volume:42 ,  Issue: 2 )