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A Hybrid AlGaInAs–Silicon Evanescent Amplifier

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6 Author(s)
Hyundai Park ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA ; Fang, A.W. ; Cohen, O. ; Jones, R.
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We report a hybrid AlGaInAs-silicon evanescent amplifier incorporating a silicon waveguide with a III-V gain medium. The optical mode of the hybrid amplifier is mostly confined to the silicon waveguide and evanescently coupled to the AlGaInAs quantum-well (QW) region where optical gain is provided by electrical current injection. These two different material systems are bonded by low-temperature oxygen plasma assisted wafer bonding at 300 degC. The fabricated device shows 13 dB of maximum chip gain with 11 dBm of output saturation power. Evanescent coupling allows a lower active region confinement factor to provide a higher saturation output power than amplifiers with centered QWs, which is important for applications that require linear amplification

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 4 )