By Topic

Microstructure and Exchange Coupling of Segregated Oxide Perpendicular Recording Media

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Nolan, T.P. ; Seagate Technol., Fremont, CA ; Risner, J.D. ; Harkness, S.D. ; Girt, E.
more authors

The magnetic properties and corresponding microstructure of (Co 80Pt20)x (metal oxide)1-x perpendicular recording media have been studied as a function of the volume percentage (vol%) of metal oxide sputtering into the magnetic film. The exchange coupling field (Hex) estimated from the coercivity (H c) and nucleation field (Hn) decreases rapidly between 0-20 vol% of metal oxide. The analytical transmission electron microscope composition analysis of (Co80Pt20)x(TiO2)1-x media confirms that the microstructure includes crystalline grain cores in an apparently amorphous oxide matrix. The grain cores comprise only Co and Pt in a nearly constant ratio independent of the vol% of oxide addition. The amorphous matrix contains Co, Ti, and O, but no Pt. The Co concentration is nearly constant in grain boundary and core regions, unlike high-temperature longitudinal recording media wherein Co segregates to form a concentration gradient in the grain core. Perpendicular media thus maintain fairly high anisotropy of the grain core phase, even for very high-oxide concentrations that significantly decrease remanant magnetization (Mrt), Hc, and thermal stability (KuV/kT)

Published in:

Magnetics, IEEE Transactions on  (Volume:43 ,  Issue: 2 )