We are currently experiencing intermittent issues impacting performance. We apologize for the inconvenience.
By Topic

Study of Nanoscale Recorded Marks on Phase-Change Recording Layers and the Interactions With Surroundings

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Shin Kai Lin ; Dept. of Phys., Nat. Taiwan Univ., Taipei ; Lin, I.C. ; Sen Yong Chen ; Hao Wen Hsu
more authors

Conductive-atomic force microscopy (C-AFM) has been used for studying nanoscale recorded marks with different length on the phase-change recording layer of optical disks. Through C-AFM images, a comparison of nanoscale recorded marks on phase-change recording layer under different writing strategies and writing power has been taken. The comparison can help analyze the combination of writing strategy, writing power and laser pulse width. The various lengths of recorded marks for high density data storage have also been found out. The interactions between phase-change recording layers and their surroundings have also been studied. This study opens up a possibility to improve the capacity of data storage in today's commercial optical disks

Published in:

Magnetics, IEEE Transactions on  (Volume:43 ,  Issue: 2 )