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Current-Induced Magnetization Switching Probability in MgO-Based Magnetic Tunnel Junctions

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6 Author(s)
Lee, J.M. ; Graduate Sch. of Eng. Sci. & Technol., Nat. Yunlin Univ. of Sci. & Technol., Touliu ; Ye, L.X. ; Weng, M.C. ; Chen, Y.C.
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We report the results of current-induced magnetization switching (CIMS) for MgO-based magnetic tunnel junctions (MTJs) with a tunneling magnetoresistance (TMR) ratio of about 66% and a critical current density of 4.45times106 A/cm2. The stable switching probability related to CIMS over 1times104 cycles is observed up to 90%. The influence between the switching current and the pulse duration is discussed

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Magnetics, IEEE Transactions on  (Volume:43 ,  Issue: 2 )