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Passivation Effects of Aluminum on Polycrystalline Silicon Thin-Film Transistor With Metal-Replaced Junctions

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2 Author(s)
Dongli Zhang ; Dept. of Electron. & Comput. Eng, Hong Kong Univ. of Sci. & Technol., Kowloon ; Man Wong

Aluminum was detected in the channel of a thin-film transistor after its replacement of the polycrystalline silicon source and drain junctions. The resulting transistor exhibits enhanced field-effect mobility, steeper slope of the pseudosubthreshold region, reduced turn-on voltage extrapolated from the linear regime of operation, higher on-state current, and improved immunity against short-channel effects. These improvements are consistent with a measured reduction in the density of trap states. The reduction can be attributed to the presence of aluminum in the channel

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 2 )