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Predicting Thermal Neutron-Induced Soft Errors in Static Memories Using TCAD and Physics-Based Monte Carlo Simulation Tools

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10 Author(s)
Warren, K.M. ; Inst. for Space & Defense Electron., Vanderbilt Univ., Nashville, TN ; Sierawski, B.D. ; Weller, R.A. ; Reed, R.A.
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A combination of commercial simulation tools and custom applications utilizing Geant4 physics libraries is used to analyze thermal neutron induced soft error rates in a commercial bulk CMOS SRAM. Detailed descriptions of the sensitive regions based upon technology in computer-aided design calibration are used in conjunction with a physics-based Monte Carlo simulator to predict neutron soft error cross sections that are in good agreement with experimental results

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 2 )