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1-μm Enhancement Mode GaAs N-Channel MOSFETs With Transconductance Exceeding 250 mS/mm

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6 Author(s)
Rajagopalan, K. ; Freescale Semicond. Inc, Tempe, AZ ; Droopad, R. ; Abrokwah, J. ; Zurcher, P.
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In this letter, 1-mum GaAs-based enhancement-mode n-channel devices with channel mobility of 5500 cm2/Vmiddots and g m exceeding 250 mS/mm have been fabricated. The measured device parameters including threshold voltage Vth, maximum extrinsic transconductance gm, saturation current Idss , on-resistance Ron, and gate current are 0.11 V, 254 mS/mm, 380 mA/mm, 4.5 Omegamiddotmm, and < 56 pA for a first wafer and 0.08 V, 229 mS/mm, 443 mA/mm, 4.5 Omegamiddotmm, and < 90 pA for a second wafer, respectively. With an intrinsic transconductance gmi of 434 mS/mm, GaAs enhancement-mode MOSFETs have reached expected intrinsic device performance

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 2 )