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Short-Channel Effects in Independent-Gate FinFETs

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2 Author(s)
Zhichao Lu ; Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL ; Fossum, J.G.

A physics-based model is used to examine short-channel effects (SCEs) in undoped nanoscale independent-gate FinFETs, e.g., the MIGFET (L. Mathew, , Proc. IEEE Internat. SOI Conf., p. 187, 2004). Predicted current-voltage characteristics of MIGFETs in the single-gate mode show that the SCEs (threshold-voltage rolloff, subthreshold-swing degradation, and drain-induced barrier lowering) are actually less severe than those of the device in the double-gate mode. Insightful explanations of the results are given

Published in:

Electron Device Letters, IEEE  (Volume:28 ,  Issue: 2 )

Date of Publication:

Feb. 2007

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