A Novel Approach in Separating the Roles of Electrons and Holes in Causing Degradation in Hf-Based MOSFET Devices by Using Stress-Anneal Technique

A novel stress-anneal approach has been investigated to separate the role of electrons and hole charge trappings in Hf-based gate oxides. It is observed that heat treatment following a stress experiments on Hf-based MOSFET can effectively eliminate electron trapping in the oxide. We also report that hole accumulation in the bulk of the Hf-based dielectrics is primarily responsible for dielectric breakdown, though both holes and electrons are trapped in the dielectrics. The Si interface quality does not seem to degrade significantly