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Relaxation of acceptance limits (RAL): a global approach for parametric yield control of 0.1-/spl mu/m deep submicron MOSFET devices

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3 Author(s)
R. Sitte ; Div. of Inf. Technol., Defence Sci. & Technol. Organ., Salisbury, SA, Australia ; S. Dimitrijev ; H. B. Harrison

An alternative method to fixed quality acceptance limits for in-line yield control is proposed. Our study is based on a sensitivity analysis, which has revealed that conventional parametric yield-control techniques using fixed in-line acceptance (tolerance) limits, as traditionally used in semiconductor manufacturing, are not efficient in deep submicron-size devices.<>

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:8 ,  Issue: 3 )