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Threshold-Voltage Control of AC Performance Degradation-Free FD SOI MOSFET With Extremely Thin BOX Using Variable Body-Factor Scheme

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5 Author(s)
Tetsu Ohtou ; Inst. of Ind. Sci., Univ. of Tokyo ; Kouki Yokoyama ; Ken Shimizu ; Toshiharu Nagumo
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The bias scheme of the variable body-factor fully depleted (FD) silicon-on-insulator (SOI) MOSFET, which has been previously proposed, is reexamined. Using a new scheme, the inversion and accumulation on the substrate in the active state can be avoided, and thus, ac performance in the active state is not degraded even with extremely thin buried-oxide (BOX), owing to the depletion of the substrate. Moreover, subthreshold leakage can be sufficiently suppressed in the standby state, owing to extremely thin BOX. This scheme provides threshold-voltage adjustability for the suppression of interdie and within-die variation in the active state. This device scheme is also applicable to multichannel FD SOI MOSFETs including FinFETs with a low-aspect-ratio fin, where the back-bias scheme can be applied

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IEEE Transactions on Electron Devices  (Volume:54 ,  Issue: 2 )