By Topic

A High-Speed and High-Responsivity Photodiode in Standard CMOS Technology

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Wei-Kuo Huang ; Dept. of Electr. Eng., Nat. Central Univ., Jhong-Li ; Yu-Chang Liu ; Yue-Ming Hsin

This work investigates a new silicon (Si) photodiode (PD) by standard complementary metal-oxide-semiconductor (CMOS) process. The basic structure of the proposed Si PD is formed by multiple p-n diodes with shallow trench isolation oxide in between p- and n-region from Taiwan Semiconductor Manufacturing Company 0.18-mum CMOS technology. The proposed PD demonstrates a responsivity of 0.37 A/W at zero bias (lambda=823nm). At reverse bias (VR) of 14.3 V, the fabricated PD exhibits a high responsivity of 0.74 A/W, a -3-dB electrical bandwidth of 1.6 GHz, and an eye diagram at 3.5 Gb/s

Published in:

Photonics Technology Letters, IEEE  (Volume:19 ,  Issue: 4 )