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Modeling hysteretic current-voltage characteristics for resonant tunneling diodes

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2 Author(s)
Ming-Huei Shieh ; Adv. Micro Devices Inc., Sunnyvale, CA, USA ; Hung Chang Lin

A simple macro circuit is described to model the hysteretic current-voltage characteristics of resonant tunneling diodes for SPICE simulation. The switch model in SPICE can be utilized to simulate the hysteretic characteristics. A multistate “hysteretic” memory cell based on resonant tunneling diodes with hysteretic current-voltage characteristic is also described and simulated using the proposed macro circuit model. The technique can also be used to model any hysteretic characteristic in general

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:14 ,  Issue: 9 )