By Topic

P-N Junction Charge-Storage Diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Moll, J.L. ; Stanford University, Palo Alto, Calif. ; Krakauer, S. ; Shen, R.

The design theory for a new range of p-n junction applications is presented. The applications include pulse generation, wave shaping, and harmonic generation. The diodes are characterized by a very abrupt interruption of reverse current in the turn-off transient and are approximately ideal nonlinear capacitors. The abrupt interruption of current in the reverse transient is related to the impurity profile in the junction. An estimate is given of the duration of the abrupt phase. In addition, the role of parasitic elements such as inductance, capacitance, and series resistance is discussed in relation to a particular representative circuit. In typical cases, the abrupt turn-off phase lasts for a time of the order of 10-9 sec. Transitions in excess of 100 v or an ampere are readily obtained.

Published in:

Proceedings of the IRE  (Volume:50 ,  Issue: 1 )