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A new microwave technique for the measurement of conductivity of semiconductors has been explored and provides agreement with more conventional methods. The proposed technique depends upon the absorption of the microwave power being propagated through a semiconductor medium. This eliminates the need for electrode attachment, making the experimental aspects of the measurement more simple. In addition, since the microwave method depends more on bulk properties, it may be less subject to error due to surface leakage or crystal imperfections in the semiconductor.