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Gallium-Arsenide Tunnel Diodes

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2 Author(s)
Holonyak, N. ; General Electric Co., Electronics Park, Syracuse, N.Y. ; Lesk, I.A.

The fabrication and properties of GaAs tunnel diodes are described. The material preparation is discussed; devices are described which have been fabricated consistently with peak to valley current ratios > 15:1, with voltage swings in the range from 0.9 to 1.2, and with current densities from 2000 amp/cm2 to over 10,000 amp/cm2 (and with correspondingly low capacitances, e.g., capacitances as low as 0.2 ¿¿f/ma and g/C figures of merit as high as 5×1010 sec-1). The temperature behavior of typical units is presented. Applications particularly well suited to GaAs units are mentioned.

Published in:

Proceedings of the IRE  (Volume:48 ,  Issue: 8 )