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Maximum Stable Collector Voltage for Junction Transistors

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1 Author(s)
Schmeltzer, R.A. ; Semiconductor and Materials Division, RCA, Somerville, N.J.

A study is made of the conditions for stability of junction transistors operating in the pre-avalanche breakdown region in order to establish on quantitative grounds the maximum collector voltage that can be applied to the transistor for stable operation. A method is shown by which this peak voltage can be calculated from a knowledge of the circuit configuration, mode of emitter bias, rate of heat generation, and ambient temperature.

Published in:

Proceedings of the IRE  (Volume:48 ,  Issue: 3 )