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Further Consideration of Bulk Lifetime Measurement with a Microwave Electrodeless Technique

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3 Author(s)
Jacobs, H. ; U. S. Army Signal Res. and Dev. Lab., Ft. Monmouth, N.J. ; Ramsa, A.P. ; Brand, F.A.

A new method for measurement of the lifetime of excess carriers in semiconductors is described. Using a steady light source and measuring changes in microwave power absorption as a function of position of the sample in a waveguide, bulk lifetime can be determined. Measurements described here were made at 9600 mc. The new technique offers the following advantages: First, the method does not require electrode attachments, thus making the preparation of the samples less difficult and the actual experiment less subject to error due to non-ohmic contacts. Second, the effects of surface recombination are made less important, thus giving a greater assurace of the evalaution of bulk lifetime.

Published in:

Proceedings of the IRE  (Volume:48 ,  Issue: 2 )

Date of Publication:

Feb. 1960

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