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Theory and Experiments on Shot Noise in Silicon P-N Junction Diodes and Transistors

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2 Author(s)
B. Schneider ; Swiss Federal Institute of Technology, Zürich, Switzerland ; M. J. O. Strutt

Experiments with silicon junction diodes and transistors have shown that previous theoretical expressions for the noise of such elements do not hold for silicon. New theoretical expressions are derived on the basis of recombination-generation in the depletion layer. These new expressions are satisfactorily checked by experiments in the case of low-level current injection. At high-level injection, however, deviations occur, for which no exact theory is known.

Published in:

Proceedings of the IRE  (Volume:47 ,  Issue: 4 )