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Transient Response of Drift Transistors

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1 Author(s)
Johnston, R.C. ; Lincoln Lab., M.I.T., Lexington, Mass.

The short-circuit transient response of a drift transistor is found for a step of input current. The one-dimensional partial differential equation for minority carriers in the base is solved by a Laplace transform technique yielding the rise, storage, and fall times in the common-emitter and common-base configurations. The improvement in rise time due to the built-in field in a drift transistor is found to be less in the common-emitter than in the common-base configuration, which in turn is found to be less than the improvement previously predicted. The built-in field is shown to lengthen storage time, but other effects of the field such as low ¿1 tend to cancel this out in a practical transistor.

Published in:

Proceedings of the IRE  (Volume:46 ,  Issue: 5 )