By Topic

Time-Dependent Transport in Low-Dimensional Systems—A Numerical Solution Using the Nonequilibrium Green's Functions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yuhui He ; Inst. of Microelectron., Peking Univ., Beijing ; Danqiong Hou ; Xiaoyan Liu ; Ruqi Han
more authors

In this paper, we present a novel numerical solution to analyze time-dependent transport in low-dimensional systems, such as one-dimensional (1-D) quantum dot and quasi-one-dimensional (Q1D) carbon nanotube systems, by using the nonequilibrium Green's functions (NEGF). The novelty of proposed approach is to jointly handle the NEGF in both the time-domain and the real-space-domain in a recursive fashion. The time-domain recursive approach is a straightforward approach to solve time-dependent transport problems, while the real-space recursive approach makes the calculations feasible for arbitrary-length 1-D and Q1D systems. To verify our proposed algorithm, we apply this method to explore the transient and ac transport properties of a sample 1-D quantum-dot array system. We will present in this paper the simulated electrical current curves, J (t), in response to various pulses and sinusoid waveforms. From these simulation results, we can obtain the delay and distortion information. We will then discuss how the length of a quantum-dot array and the hopping energy affect the transport behavior. The knowledge we gain from this project will help researchers to evaluate the electrical properties of 1-D and Q1D materials. The knowledge can also benefit the making of time-dependent 1-D and Q1D nanoelectronic devices

Published in:

IEEE Transactions on Nanotechnology  (Volume:6 ,  Issue: 1 )