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Time-resolved study of silicon surface recombination

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2 Author(s)
Bokor, J. ; AT&T Bell Lab., Holmdel, NJ, USA ; Halas, N.J.

The technique of two-photon time- and angle-resolved photoemission spectroscopy was used to observe the dynamics of surface-state populations directly as photoexcited bulk carriers recombine on a semiconductor surface with a well-known electronic structure. The surface chosen for this study is the clean, cleaved Si(111)2×1 surface. These observations were used to construct a detailed and comprehensive model for electron-hole recombination on this surface which incorporates and is consistent with all previously obtained data on its electronic structure and dynamics. Transient surface charging effects which occur as the surface-state populations evolve were found to influence strongly the flow of bulk carriers toward the surface and were included in the model self-consistently

Published in:

Quantum Electronics, IEEE Journal of  (Volume:25 ,  Issue: 12 )