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High speed III-V electrooptic waveguide modulators at λ-1.3 μm

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2 Author(s)
Wang, S.Y. ; Hewlett-Packard Labs., Palo Alto, CA, USA ; Lin, S.H.

Traveling wave GaAs electrooptic waveguide modulators at a wavelength of 1.3 μm with bandwidth in excess of 20 GHz have been developed and characterized. The design and characteristics of both p-i-n modulators in microstrip configuration and Schottky barrier on n --GaAs/semi-insulating (SI) GaAs in the coplanar strip configuration modulators are discussed. It is shown that microwave loss and slowing on n+ GaAs substrates will limit the bandwidth of the microstrip modulator to less than 10 GHz for a device 8 mm in length. Modulators with bandwidths in excess of 10 GHz are fabricated on SI GaAs substrates

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Lightwave Technology, Journal of  (Volume:6 ,  Issue: 6 )