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A Low-Power Wideband CMOS LNA for WiMAX

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3 Author(s)
Amer, A. ; Dept. of Electron. & Commun. Eng., Ain Shams Univ., Cairo ; Hegazi, E. ; Ragai, H.

In this brief, the design of a low-power inductorless wideband low-noise amplifier (LNA) for worldwide interoperability for microwave access covering the frequency range from 0.1 to 3.8 GHz using 0.13-mum CMOS is described. The core consumes 1.9 mW from a 1.2-V supply. The chip performance achieves S11 below -10 dB across the entire band and a minimum noise figure of 2.55 dB. The simulated third-order input intercept point is -2.7 dBm. The voltage gain reaches a peak of 11.2 dB in-band with an upper 3-dB frequency of 3.8 GHz, which can be extended to reach 6.2 GHz using shunt inductive peaking. A figure of merit is devised to compare the proposed designs to recently published wideband CMOS LNAs

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Circuits and Systems II: Express Briefs, IEEE Transactions on  (Volume:54 ,  Issue: 1 )