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Resonant tunneling in quantum heterostructures: electron transport, dynamics, and device applications

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3 Author(s)
H. Sakaki ; Inst. of Ind. Sci., Tokyo Univ., Japan ; T. Matsusue ; M. Tsuchiya

The current understanding of the resonant tunneling process of electrons in double-barrier (DB) diodes and in coupled quantum well structures is described. The authors examine the validity of the simple Fabry-Perot model in describing the electron transport in actual DB diodes. They then describe a picosecond laser study to clarify the dynamics of resonant tunneling, including the intrinsic time delay associated with the multiple reflection of electron waves. Lastly, they discuss both the current state and prospects of device applications for high-speed electronics and optoelectronics

Published in:

IEEE Journal of Quantum Electronics  (Volume:25 ,  Issue: 12 )