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Effects of ALD TiN Metal Gate Thickness on Metal Gate /High-k Dielectric SOI FinFET Characteristics

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11 Author(s)

Effects of TiN thickness on metal/high-k SOI FinFET characteristics were studied. Compared to planar SOI devices, our metal/high-k FinFETs showed improved carrier mobility due to a vertical strain effect. Almost 2times higher field mobility for a (110)/lang110rang nMOSFET was achieved. With increasing TiN thickness, electron and hole mobility improved in long channel devices due to improved interface quality. As channel length decreased, however, thinner TiN showed higher electron mobility but lower hole mobility due to a strain effect. These results suggest that integrating different metal thicknesses in metal gate/high-k CMOS FinFETs is a promising method to maximize device performance

Published in:

International SOI Conference, 2006 IEEE

Date of Conference:

2-5 Oct. 2006