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Ka-Band (35 GHz) Low-noise 180 nm SOI CMOS Amplifier

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9 Author(s)

We present the development of a coplanar waveguide (CPW) Ka-band (35 GHz) low-noise amplifier (LNA) designed in MIT-Lincoln Laboratory (MIT-LL) 180 nm fully depleted silicon-on-insulator (FDSOI) CMOS technology fabricated on a "float zone" (2000 ohm-cm) substrate. The LNA exhibits a noise figure of 6.5 dB and an associated gain of 6.7 dB at 37 GHz while consuming 27.5 mW of DC power. When biased for maximum gain the LNA exhibits 7.3 dB gain at 35.8 GHz

Published in:

International SOI Conference, 2006 IEEE

Date of Conference:

2-5 Oct. 2006