Cart (Loading....) | Create Account
Close category search window

Novel Silicide-Cladded Uniaxially-Strained Thin-Body SOI CMOS FETs Featuring Floating Body Modulation Induced by Hf-based Gate Dielectric

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Ootsuka, F. ; Semicond. Leading Edge Technol., Tsukuba-shi ; Watanabe, T. ; Nara, Y. ; Mise, N.
more authors

In this paper, the authors propose novel thin-body SOI FETs with NiSi-cladding. NiSi-cladding is fabricated after the formation of the sacrificing Si layer, and hence the Si consumption in SOI layer is minimized. It is found that NiSi cladding provides compressive strain in pFETs, which causes one order of magnitude decrease in pFET's off-current. In addition to the effect of NiSi-cladding, the influence of HfSiON gate dielectric on the floating-body effect (FBE) in thin-body SOI pFETs is focused upon

Published in:

International SOI Conference, 2006 IEEE

Date of Conference:

2-5 Oct. 2006

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.