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Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications

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4 Author(s)
Uchiyama, A. ; Semicond. R&D Div., Oki Electr. Ind. Co. Ltd., Tokyo ; Baba, S. ; Nagatomo, Y. ; Ida, J.

Today, various specifications are demanded to LSI, which is indispensable for industry and our life. For example, in the field of mobile equipments, watch and sensor devices in ubiquitous network, low-power-consumption devices are required. On the other hand, in the field of high-end processing, high performance devices are required. Silicon-on-insulator (SOI) devices have various advantages over bulk Si devices in the above-mentioned fields (Colingue, 2004). SOI-based sensors have also been introduced (Wan, 2005). In this paper, aiming for ultra-low-power digital analog and RF applications, we present major characteristics and issues of fully-depleted SOI (FD-SOI), and discuss the approaches to expanding the capability of FD-SOI devices

Published in:

International SOI Conference, 2006 IEEE

Date of Conference:

2-5 Oct. 2006