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A new large-signal model based on pulse measurement techniques for RF power MOSFET

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6 Author(s)

A large-signal model for RF power MOSFET has been obtained using a new characterization and extraction technique. This technique is based on pulsed I-V characteristics and pulsed S-parameters measurements, to take into account the thermal state of the device. A table-based model is used to represent the I-V drain current source. The complete large-signal model is implanted in an harmonic-balance commercial simulator and its accuracy is evidenced by a comparison with active load-pull measurements at L band.<>

Published in:

Microwave Symposium Digest, 1995., IEEE MTT-S International

Date of Conference:

16-20 May 1995

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