By Topic

Monte Carlo Simulation of Boron Implantation into (100) Germanium

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wittmann, R. ; Inst. for Microelectron., TU Wien ; Hossinger, A. ; Cervenka, J. ; Uppal, S.
more authors

We present a Monte Carlo simulation study for introducing boron ions into Ge in the energy range from 5 to 40 keV. The successful calibration of our ion implantation simulator for crystalline Ge is demonstrated by comparing the predicted boron profiles with SIMS measurements. The generation of point defects are calculated with a modified Kinchin-Pease damage model. An implanted boron profile in Ge is shallower than in Si for any given energy due to the larger nuclear and electronic stopping power of Ge atoms. We found that the higher displacement energy in Ge, the stronger backscattering effect, and the smaller energy transfer from the ion to the primary recoil of a collision cascade are mainly responsible for the significantly reduced damage in Ge

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006