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Modeling of Cross-Talk Effects in Floating-Gate Devices Using TCAD Simulations

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5 Author(s)
Saad, Yv. ; Synopsys Switzerland LLC, Zurich ; Ciappa, M. ; Pfaffli, P. ; Bomholt, L.
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Technology CAD (TCAD) modeling is used to develop, analyze, and optimize flash memory devices under all operating conditions, taking into account three-dimensional effects such as cross-talk between the cells. A methodology for structure generation, meshing, device simulation, and characterization of flash memory devices is proposed. The results demonstrate the effectiveness of full 3D simulation models for flash memory cells, which capture the geometrical, physical, and electrostatic effects

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

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