Referenced Items are not available for this document.
For the first time, the drain current enhancement effect of stressed contact liner applied to various wafer material is discussed in this paper. The enhancement is larger in SOI and SOQ device than in bulk MOSFET. Thinner SOI film causes more enhancement, but saturation current fluctuation sensitive to SOI thickness variation increases drastically. In case of SOS wafer, enhancement is reduced as SOS film thickness becomes thinner, because of large elastic modulus of sapphire
Published in:
Simulation of Semiconductor Processes and Devices, 2006 International Conference on
Date of Conference: 6-8 Sept. 2006
- Page(s):
- 220 - 223
- Print ISBN:
- 1-4244-0404-5
- INSPEC Accession Number:
- 9431661
- Conference Location :
- Monterey, CA
- Digital Object Identifier :
- 10.1109/SISPAD.2006.282876
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