By Topic

Impact of Wafer and Technology Selection on Liner Stress Mobility Enhancement

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Mochizuki, M. ; Oki Electr. Ind. Co. Ltd., Tokyo ; Fukuda, K.

For the first time, the drain current enhancement effect of stressed contact liner applied to various wafer material is discussed in this paper. The enhancement is larger in SOI and SOQ device than in bulk MOSFET. Thinner SOI film causes more enhancement, but saturation current fluctuation sensitive to SOI thickness variation increases drastically. In case of SOS wafer, enhancement is reduced as SOS film thickness becomes thinner, because of large elastic modulus of sapphire

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006