Cart (Loading....) | Create Account
Close category search window
 

A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Jie Deng ; Dept. of Electr. Eng., Center for Integrated Syst., Stanford, CA ; Wong, H.-S.P.

This paper presents a circuit-compatible compact model for short channel length (5 nm~100 nm), quasi-ballistic single wall carbon nanotube field-effect transistors (CNFETs). For the first time, a universal circuit-compatible CNFET model was implemented with HSPICE. This model includes practical device non-idealities, e.g. the quantum confinement effects in both circumferential and channel length direction, the acoustical/optical phonon scattering in channel region and the resistive source/drain, as well as the real time dynamic response with a transcapacitance array. This model is valid for CNFET for a wide diameter range and various chiralities as long as the carbon nanotube (CNT) is semiconducting

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.