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A Circuit-Compatible SPICE model for Enhancement Mode Carbon Nanotube Field Effect Transistors

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2 Author(s)
Jie Deng ; Dept. of Electr. Eng., Center for Integrated Syst., Stanford, CA ; Wong, H.-S.P.

This paper presents a circuit-compatible compact model for short channel length (5 nm~100 nm), quasi-ballistic single wall carbon nanotube field-effect transistors (CNFETs). For the first time, a universal circuit-compatible CNFET model was implemented with HSPICE. This model includes practical device non-idealities, e.g. the quantum confinement effects in both circumferential and channel length direction, the acoustical/optical phonon scattering in channel region and the resistive source/drain, as well as the real time dynamic response with a transcapacitance array. This model is valid for CNFET for a wide diameter range and various chiralities as long as the carbon nanotube (CNT) is semiconducting

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

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