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Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

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3 Author(s)
Tanabe, R. ; Fujitsu Labs. Ltd., Tokyo ; Ashizawa, Y. ; Oka, H.

As CMOS technology is dramatically scaled down in recent years, the operation of SRAM becomes one of critical issues for further scaling. In this paper, we have focused on both FD SGSOI and DG (FinFET) devices because of the scaling capabilities, and we have simulated SRAM SNM with discrete dopant fluctuations in the channel regions by 3D simulation. As for SNM, FinFET is a promising candidate up to 32 nm node, but for 22 nm node, it will be difficult to operate even a FinFET with stability. As for fluctuations, the total number of dopant in channel depletion layer is a key factor. The fluctuations of SNM in FinFET are reduced by balancing fin thickness and dopant density in the channel

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006