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Ab initio calculation of As-vacancy deactivation and interstitial-mediated As diffusion in strained Si

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3 Author(s)
Kim, Yonghyun ; Microelectron. Res. Center, Texas A&M Univ., Austin, TX ; Hwang, G. ; Banerjee, Sanjay K.

We investigate As-vacancy deactivation and interstitial-mediated As diffusion in strained Si by using density functional theory calculation. First, we find that biaxial tensile strain will not have a significant effect on the binding energies of As-vacancies. Second, tensile strain increases the stability of the diffusing As-Sii pairs. Our results could be one of the reasons that explain why As activation/deactivation and interstitial-mediated As TED has a weak dependence on biaxial tensile strain experimentally

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006