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Ab-initio Calculations of Shear Stress Effects on Defects and Diffusion in Silicon

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3 Author(s)
Diebel, Milan ; Process Technol. Modeling Dept., Intel Corp., Hillsboro, OR ; Kennel, H.W. ; Giles, M.D.

In recent years a lot of attention has been given to engineering the stress state in ULSI devices to enhance device performance. As a result the stress conditions inside state-of-the-art devices are significantly more complex than simple hydrostatic or biaxial stress situations. In this paper we extend previous work on normal stress effects on point-defect equilibrium concentrations as well as point-defect and dopant diffusion to also include shear. We find there is little effect of shear stress on point-defect equilibrium concentrations. However shear is important for vacancy (V), interstitial (I), and boron (B) migration since it introduces anisotropies and off-diagonal elements in the diffusivity tensor. Diffusivity can no longer be view as a diagonal tensor, but instead a general tensor needs to be used to describe I, V, and B diffusion correctly

Published in:

Simulation of Semiconductor Processes and Devices, 2006 International Conference on

Date of Conference:

6-8 Sept. 2006

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