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Accurate prediction of the small-signal gain of the HBT dual-fed distributed amplifier

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2 Author(s)
Botterill, I.A. ; Dept. of Electr. Eng. & Electron., Brunel Univ., Uxbridge, UK ; Aitchison, C.S.

The benefits of the MESFET dual-fed distributed amplifier over the conventional distributed amplifier (DA), both in small and large-signal operation, have previously been reported. Recent interest in the heterojunction bipolar transistor (HBT) DA has led to consideration of the HBT in the dual-fed configuration. It has been found that the previously proposed equation, developed to predict the small-signal gain of the MESFET dual-fed DA, is inaccurate when applied to the HBT dual-fed DA. This paper describes an expression which gives better agreement with the simulated performance of such an amplifier.<>

Published in:

Microwave Symposium Digest, 1995., IEEE MTT-S International

Date of Conference:

16-20 May 1995

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