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The following topics are dealt: carbon nanotube transport; carrier mobility and incomplete ionization level; Monte Carlo-strain and orientation effects; semiconductor defects, diffusion, and activation; fluctuations; RF semiconductor device noise; point defects and interfaces; gate stack, semiconductor interface, and leakage current distribution; on-chip interconnect; nanoelectronics; and physical models

Published in:

2006 International Conference on Simulation of Semiconductor Processes and Devices

Date of Conference:

6-8 Sept. 2006