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Recovery of Short Circuit Current of 3J Solar Cells by Current Injection at Low Temperature

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6 Author(s)

InGaP/GaAs/Ge triple-junction (3J) solar cells designed for space applications were irradiated with 10 MeV protons at 3times1013 /cm2 at 210 K. Current at 0.25 A/cm2 was injected into the irradiated 3J solar cells after irradiation at 210 K to avoid the thermal annealing effects. The short circuit current (Isc) recovered with increasing current injection time, and the recovery saturated at current injection times above 1000 sec. The saturated Isc was 98% of the initial value. The defect annealing rate (A) was estimated to be between 0.003 and 0.01/s from the fitting of the current injection time dependence of the recovery of I sc

Published in:

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on  (Volume:2 )

Date of Conference:

May 2006