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Low-Temperature Fast Growth of Polycrystalline Silicon Thin Film from SiCl4 Light-Diluted Hydrogen by PECVD

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6 Author(s)
Xuanying Lin ; Department of Physics, Shantou University, Guangdong, 515063, People's Republic of China, Tel: 86-0754-2902836 Fax: 86-0754-2902767, Electronic mail: xylin@stu.edu.cn ; Rui Huang ; Kuixun Lin ; Yunpeng Yu
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The polycrystalline silicon films deposited at a high deposition rate over 3.5Aring/S along with a crystalline fraction of 80% have been obtained using decomposing SiCl4 gas lightly diluted in hydrogen under low temperature of 200-300 by plasma enhanced chemical vapor deposition technique. The deposition rate and the crystalline fraction strongly depend not only on the if power, but also on the hydrogen dilution ratio. It is found that the higher growth rate crystalline fraction can be achieved using light-hydrogen dilution in contrast to SiH4/H2 gases and through the enhancement of the gas-phase reaction in SiCl4/H2 plasma by the optimum radio frequency power

Published in:

2006 IEEE 4th World Conference on Photovoltaic Energy Conference  (Volume:2 )

Date of Conference:

May 2006