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Preparation of Nanocrystalline Silicon Carbide Thin Films by Hot-Wire Chemical Vapor Deposition at Various Filament Temperature

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6 Author(s)
Tabata, A. ; Dept. of Electr. Eng. & Comput. Sci., Nagoya Univ. ; Komura, Y. ; Kanaya, M. ; Narita, T.
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We prepared silicon carbide (SiC) thin films by hot-wire chemical vapor deposition (HW-CVD) using methane as a carbon source gas at substrate temperature of 325degC and investigated the influence of filament temperature, Tf, on the structure and optical properties of the resulting films. X-ray diffraction patterns showed that film prepared at Tf=1400degC was amorphous SiC:H and that films prepared at Tf above 1600degC were nanocrystalline 3C-SiC. In addition, as the Tf was increased, the mean crystallite size and XRD peak intensity increased. The optical absorption spectra shifted toward higher energy region with increasing T f, suggesting the band gap became higher. It was found that nanocrystalline 3C-SiC could be obtained from HW-CVD using methane source gas even at a low substrate temperature

Published in:

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on  (Volume:2 )

Date of Conference:

May 2006

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