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Preparation of B-Doped Micorcrystalline Silicon Thin Films by RF Magnetron Sputtering

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4 Author(s)
Tabata, A. ; Dept. of Electr. Eng., Nagoya Univ. ; Nakano, J. ; Misutani, T. ; Fukaya, K.

Boron-doped microcrystalline silicon (muc-Si:H) with various film thicknesses were prepared by radio-frequency (15.56 MHz) magnetron sputtering, and their structure and electrical conductivity were investigated. Although a heavily-doped silicon wafer was used as a target, the conductivity of the resulting films was 10-6 Scm -1, which is almost the same as that of undoped muc-Si:H thin film. The conductivity of films prepared with boron grains on the silicon wafer target was higher than 100 Scm-1 for film thickness above 50 nm. These findings indicate that setting boron grains on silicon wafer target makes it easy to prepare boron-doped muc-Si:H thin films with high conductivity

Published in:

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on  (Volume:2 )

Date of Conference:

May 2006