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Effect of HF Treatment on Hydrogenated Silicon Nitride Anti-reflection Films Quality and Optical Properties

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4 Author(s)
Jeon, M.S. ; Tokyo Univ. of Agric. & Technol. ; Dhamrin, M. ; Saitoh, T. ; Kamisako, K.

The effect of diluted hydrofluoric (HF) acid treatment on the refractive index, etch rate and chemical composition of hydrogenated silicon nitride (SiNx:H) films is investigated. The hydrogenated silicon nitride (SiNx:H) films are deposited using the direct plasma enhanced chemical vapor deposition (PECVD) on n +p crystalline silicon solar cells before contact screen-printing process. In order to study the optical properties and chemical composition of formed SiNx:H layers, the reflectance and FT-IR spectra are used. Moreover, the printed contact on the deposited SiNx:H films and its cross section are observed by the scanning electron microscopy (SEM) after firing with different firing durations in quartz tube furnace

Published in:

Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on  (Volume:2 )

Date of Conference:

May 2006